Mohd Sharizal Alias1, Burhanuddin Kamaluddin2 and Muhamad Rasat Muhamad2


1Photonics Devices Unit

Telekom Research & Development Sdn. Bhd.

Idea Tower, UPM-MTDC, Technology Incubation Center One

Lebuh Silikon,43400 Serdang, Selangor Darul Ehsan

2Solid State Research Laboratory

Physics Department

University Malaya

50603 Kuala Lumpur


Email: sharizal@rndtm.net.my





Modeling and simulation of Vertical-Cavity Surface-Emitting Lasers (VCSELs) diode operating at 1.55 µm is demonstrated for application in long wavelength optical communication. The simulated PL spectra and optical spectrum exhibits lasing wavelength at 1.55 µm with single longitudinal mode operation. The VCSELs diode demonstrated a threshold current of 1.05 mA, threshold current density of 1.53 kA/cm2, 0.5609 of differential quantum efficiency, 0.2817 power conversion efficiency, voltage threshold of 0.95 V, turn-on voltage of 0.8 V and DBR series resistance of 142.86 W. A symmetric and circular emitted beam with beam divergence of 20 is observed from the near-field and far-field simulation.





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