Carrier Transport and I-V Characteristic of
Au/Si Silicides using Open Photoacoustic Cell
And Four Point-Probe Techniques
Applied Optics Laboratory
Department of Physics
Faculty of Science and Environmental Studies
43400 Universiti Putra
The carrier transport properties of Au/Si samples annealed at three temperatures (i.e. 100oC, 363 oC and 800oC) were investigated using open photoacoustic cell (OPC) technique. A gold film of 45 nm was deposited on the silicon substrate and annealed in air environment. We observed that Au8.1Si1.9 silicide and Au7Si(622) silicide were formed at both 363oC and 800oC annealing temperature. Obviously the Au8.1Si1.9 silicide was observed in all Au/p-Si system. The result indicates that the recombination process increases with the formation of Au7Si silicide. From the analysis of photoacoustic phase fitting and four point probe techniques, surface recombination velocity of gold silicide was found increase with the increasing annealing temperature. However, the band-to-band recombination lifetime decreased as annealing temperature increased. The I-V characteristic shows the Schottky curves for the annealing temperature of 363oC and 800oC. This behavior is due to the formation of Au7Si(622) silicide clusters.
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