Solid State Science and Technology, Vol. 11, No 1 (2003) 89-94

 

ELLIPSOMETRIC STUDY OF Si1-x Gex ALLOY

 

Suriati Paiman1, Samsudi Sakrani2, Bakar Ismail2 , Zainal Abidin Talib1.

1Physics Dept., Faculty of Science and Environmental Studies, Universiti Putra Malaysia, Serdang, Selangor.

2Thin Films Laboratory, Physics Dept., Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor.

suriati@fsas.upm.edu.my

 

Key Words: Si1-xGex, Refractive Index, Ellipsometer

 

 

ABSTRACT

A report on ellipsometric studies of Si0.5 Ge0.5  and Si0.7 Ge0.3  thin films is described. The samples were earlier prepared from SiGe disks of 3” diameter using RF magnetron sputtering and the films were deposited onto glass substrates at room temperature. Some of the optical properties were investigated using an ellipsometer. In this method, we investigate the changes in refractive indices, n and extinction coefficients, k with film thickness as well as the relevant dielectric constant, ε. The results showed that, at a wavelength of 632.80 nm, n was found to increase with an increase of the germanium contents.

 

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REFERENCES

 

[1]        People, R. (1986), Quantum Electron. QE-22, pp1696.

[2]         Patton, G.L., Comfort, J.H., Meyerson, B.S., Crabbe, E.F., Scilla, G.J., Fresart, E. de., Stork, J.M.C., Sun, J.Y.C., Harame, D.L., and Burgharz, J.N., (1990), IEEE Electron Dev. Letter, 11, pp 171.

[3]       Humlicek, J., Garriga, M., Alonso, M.I., and Cordona, J., (1989), Journal of

Applied Physics, 65, pp 2827.

[4]       Azzam, R.M.A. and Bashara, N.M., (1987). Ellipsometry and Polarized Light.

:North Holland, Amsterdam.

[5]       Gaworzewski, K., Helmrich, T.K., and Penner, U. (1998). Journal Applied

Physics. 83 (10), pp 5258-5263.

[6]        Hummel, R.E and Guenther, K.H., (1995). Handbook of Optical Properties. Vol

1. London : CRC Press. Pp342.

[7]       Humlicek, J. (2000). “Optical function of the relaxed SiGe Alloy.” in. Kasper, E. and Lyutovich, K. (Eds.).

“Properties of Silicon Germanium and SiGe:C.” London: INSPEC. 45-49. [8]         DRE-Dr.Riss Ellipsometerbau GmbH (1998). “EL X-02C High Precision

Ellipsometer Operation Manual.” Germany.

[9]       Tompkins, H.G., and McGahan, W.A. (1999). Spectroscopic Ellipsometry And

Reflectometry. :John Wiley & Sons, INC, New York, pp 25.

[10]      Schmidt, E and Vedam, K. (1971). Solid State Commun., 9, pp 1187.