Solid State Science and Technology, Vol. 14, No 1 (2006) 160-165

ISSN 0128-7389

160

ELECTRICAL PROPERTIES OF POROUS SILICON PREPARED

BY PHOTOCHEMICAL ETCHING

A. M. Ahmmed1, A. M. Alwan1, N. M. Ahmed2

1School of Applied Science/ University of Technology, Baghdad-IRAQ

2School of physics/ Universiti Sains Malaysia/ 11800/ Pinang

 

ABSTRACT

In this work, electrical properties of porous silicon (PS) structure fabricated by using the photochemical etching process in HF acid under different etching times was investigated. (111) n-type silicon wafers with two different resistivities (ρ1 = 3.25 x 10-4 Ωcm and ρ2 = 4.3-5.6 Ωcm) were used. The wafers were etched in 40% HF acid by using 100 W quartz tungsten halogen lamp integral with ditchroic ellipsoidal mirror for two different etching times (t1 = 1800 s and t2 = 5400 s). The current-voltage characteristics for all Al/PS/n-Si/Al structures show a rectifying behavior with different values of ideality factor and barrier height. The forward and reverse current show Schottky-like behavior and the presence of an inflection point in reverse a characteristic is explained by energy band gap difference between porous silicon and crystalline silicon substrates.

 

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REFERENCES

[1]. Canham, L. (1990); Appl. Phys. Lett. 57, 1046.

[2]. Koshida, N. and Koyama, H. (1992); Appl. Phys. Lett. 60, 347.

[3]. Halimaoui, A., Oules, C. and Bomchil, G. (1991); Appl. Phys. Lett. 59, 304.

[4]. Yamamoto, N., Sumiya, A. and Takai, H. (2000) Mate. Sci. and Eng. B6-70,

205.

[5]. Dimotrov, D. (1995); Phys. Rev. B51, 1562.

[6]. Chorin, M., Moller, F. and Koch, F. (1995); J. Appl. Phys. 77(9), 4482.

[7]. Pulsford, N., Rikken, J. and Kessener, Y., Lous, E. and Verhuizen, A.

(1994); J. Appl. Phys.75, 636.

[8]. Ray, A., Mabrook, M. and Nabok, A. (1998); J. Appl. Phys.84(6), 3232.

[9]. Choy, C. and Cheah, K. (1995); J. Appl. Phys. A(61), 45.

[10]. S. Mavi, H., Rasheed, B. and Shukla, A. (2001); J. Non-crystalline solid.

286, 162.

[11]. Mavi, H., Rasheed, B. and Jain, K. (2002); J. Phys. D., Appl. Phys. 34, 292.

[12]. Ahmed, A., Alwan, A. and Alrawi, N., Proceedings of XXII Regional

Conference on solid State Science and Technology, 18-21 December, 2005,

Malaysia.

[13]. Sze, S. (1980); Physics of Semiconductor Devices, 2nd ed. Wiley, New York,

ch. 12.

[14]. Card, H. and Rhoderick, E. (1971); J. Phys. D., Appl. Phys. 4, 1589.

[15]. Card, H. (1974); Solid State Commun. 14, 1011.

[16]. Maruska, H., Namavar, F. and Kalhoran, N. (1992); Appl. Phys. Lett. 61,

11338.

[17]. Anderson, R., Muller, R. and Tobias, C. (1991); J. Electrochem. Soc. 138,

3406.

[18]. Zheng, J., Liau, K. and Shen, W. (1992); Appl. Phys. Lett. 61, 2514.

[19]. Wittmer, M. (1990); Phys. Rev. B42, 5249.