Solid State Science and Technology, Vol. 15, No 1 (2007) 176-181

ISSN 0128-7389

Corresponding Author: ashaari@tmrnd.com.my

176

Ti/Pt SCHOTTKY CONTACT MEASUREMENTS FOR HEMT GATE

METALLIZATION USING CURRENT-VOLTAGE METHOD

Ashaari Yusofa, Hariyadi Soetedjoa, Mohd Nizam Osmana,

Asban Dolaha, Mohamed Razman Yahyaa, Abdul Fatah Awang Mata,

Azlan Abdul Azizb and Kamarulazizi Ibrahimb

 

aMicroelectronic & Nano Technology Programme,

Telekom Research & Development Sdn. Bhd.

43400 Serdang, Selangor, Malaysia

bSchool of Physics, Universiti Sains Malaysia,

11800 Pulau Pinang, Malaysia

 

ABSTRACT

A study of Schottky contact from Ti/Pt metal stack on Si-doped AlGaAs HEMT supply

layer using current-voltage method is presented here. The Schottky barrier heights at

metal-semiconductor junction were determined on two samples prepared by MBE.

From plots of natural logarithm of current density versus voltage sweep, the values of

current density at zero voltage were extrapolated, hence enabling the calculation of

schottky barrier values. The effect of thermal annealing on Schottky barrier height for

each samples were also discussed here. From this experiment, Schottky barrier heights

with values for 0.65 eV has been successfully obtained from the metal-semiconductor

interface.

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