Solid State Science and Technology, Vol. 15, No 2 (2007) 44-49

ISSN 0128-7389



Ashaari Yusofa, Hariyadi Soetedjoa, Mohd Nizam Osmana,

Asban Dolaha, Mohamed Razman Yahyaa, Abdul Fatah Awang Mata,

Azlan Abdul Azizb and Kamarulazizi Ibrahimb


aMicroelectronic & Nano Technology Programme,

Telekom Research & Development Sdn. Bhd.

43400 Serdang, Selangor, Malaysia

bSchool of Physics, Universiti Sains Malaysia,

11800 Pulau Pinang, Malaysia.




A study of Schottky contact from Ti/Pt metal stack on Si-doped AlGaAs HEMT supply layer using current-voltage method is presented here. The Schottky barrier heights at metal-semiconductor junction were determined on two samples prepared by MBE. From plots of natural logarithm of current density versus voltage sweep, the values of current density at zero voltage were extrapolated, hence enabling the calculation of schottky barrier values. The effect of thermal annealing on Schottky barrier height for each samples were also discussed here. From this experiment, Schottky barrier heights with values for 0.65 eV has been successfully obtained from the metal-semiconductor interface.



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