Solid State Science and Technology, Vol. 15, No 2 (2007) 66-74
IMPACT OF DELTA-DOPED POSITION ON THE PERFORMANCE OF AlGaAs/InGaAs/GaAs PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR
Norman Fadhil Idham Muhammad, Ahmad Ismat Abdul Rahim, Rasidah Sanusi, Abdul Fatah Awang Mat and Mohamed Razman Yahya
Telekom Research &Development Sdn.Bhd., Idea Tower, UPM-MTDC
Technology Incubation Center One, Lebuh Silikon, 43400 Serdang, Selangor, Malaysia
This paper reports on simulation of delta-doped AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT’s) by means of two dimensional device simulations. The commercial two dimensional device simulator Taurus-MEDICI was used to study the band-diagram, threshold voltage (Vth), transconductance (Gm) and cut off frequency (fT) of the PHEMT. Three different devices with single delta-doped layer located at three different positions in the pHEMT layer are simulated. The result shows that the position of delta-doped layer can be optimised to maximise the drain current, transconductance and cut-off frequency. It also can determine the device operation mode, whether as enhancement mode or depletion mode.
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