Solid State Science and Technology, Vol. 15, No 2 (2007) 66-74

ISSN 0128-7389

IMPACT OF DELTA-DOPED POSITION ON THE PERFORMANCE OF AlGaAs/InGaAs/GaAs PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR

 

Norman Fadhil Idham Muhammad, Ahmad Ismat Abdul Rahim, Rasidah Sanusi, Abdul Fatah Awang Mat and Mohamed Razman Yahya

 

Telekom Research &Development Sdn.Bhd., Idea Tower, UPM-MTDC

Technology Incubation Center One, Lebuh Silikon, 43400 Serdang, Selangor, Malaysia

 

ABSTRACT

This paper reports on simulation of delta-doped AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT’s) by means of two dimensional device simulations. The commercial two dimensional device simulator Taurus-MEDICI was used to study the band-diagram, threshold voltage (Vth), transconductance (Gm) and cut off frequency (fT) of the PHEMT. Three different devices with single delta-doped layer located at three different positions in the pHEMT layer are simulated. The result shows that the position of delta-doped layer can be optimised to maximise the drain current, transconductance and cut-off frequency. It also can determine the device operation mode, whether as enhancement mode or depletion mode.

 

http://journal.masshp.net/wp-content/uploads/Journal/2007/Jilid%202/Norman%20Fadhil%20Idham%20Muhammad%2066-74.pdf

 

REFERENCES

[1] Chang, Y. and Kuo, Y.-K. (2005); Appl.Phys.A, 81, 877-879.

[2] Tian, H., Kim, K.W., Littlejohn, M.A., Bedair, S.M. and Witkowski, L.C. (1992); IEEE Transaction on Electron Devices, Vol. 39, No.9.

[3] Nawaz, M. and Miranda, J.M. (2000); Semicond. Sci. Technol. 15, 728-735.

[4] Kalna, K. and Asenov, A. (2004); Solid-State Electronics, 48, 1223-1232.

[5] Taurus Medici-User Guide (Oct 2005), Version X-2005.10.