Solid State Science and Technology, Vol. 15, No 2 (2007) 98-102

ISSN 0128-7389

ANNEALING EFFECTS ON ELECTRICAL CHARACTERISTICS OF GaAs IMPLANTED WITH 100 MeV 56Fe and 120Sn IONS

 

Yousuf Pyar Alia, K.V. Sukhatankarb, A. M. Narsalec

aDepartment of Physics, Hadharamout University, Mukalla, Yemen

bDepartment of Physics, Gogate-Jogalekar College, Ratnagiri- 415612, India

cDepartment of Physics, University of Mumbai, Vidyanagari, Mumbai-400098, India

 

ABSTRACT

Single crystal n-GaAs substrates have been implanted at room temperature with 70 MeV 56Fe and 120Sn ions to a fluence of 1x1018 ions/m2. The electrical characteristics were investigated after implantation and annealing up to 850C by current voltage measurements. Low temperature resistance measurements of these samples show that the 56Fe implanted samples annealed to 350C and 120Sn implanted samples annealed to 450C are dominated by a variable range hoping conduction, whereas for the 56Fe implanted samples annealed to 450C and 550C and 120Sn implanted samples annealed to 550C and 650C the electrical conduction is due to hoping between neighboring defect sites.

 

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