Solid State Science and Technology, Vol. 15, No 2 (2007) 98-102
ANNEALING EFFECTS ON ELECTRICAL CHARACTERISTICS OF GaAs IMPLANTED WITH 100 MeV 56Fe and 120Sn IONS
Yousuf Pyar Alia, K.V. Sukhatankarb, A. M. Narsalec
aDepartment of Physics, Hadharamout University, Mukalla, Yemen
bDepartment of Physics, Gogate-Jogalekar College, Ratnagiri- 415612, India
cDepartment of Physics, University of Mumbai, Vidyanagari, Mumbai-400098, India
Single crystal n-GaAs substrates have been implanted at room temperature with 70 MeV 56Fe and 120Sn ions to a fluence of 1x1018 ions/m2. The electrical characteristics were investigated after implantation and annealing up to 850°C by current voltage measurements. Low temperature resistance measurements of these samples show that the 56Fe implanted samples annealed to 350°C and 120Sn implanted samples annealed to 450°C are dominated by a variable range hoping conduction, whereas for the 56Fe implanted samples annealed to 450°C and 550°C and 120Sn implanted samples annealed to 550°C and 650°C the electrical conduction is due to hoping between neighboring defect sites.
 Thompson, P.E. (1991); Nucl. Instr. and Meth. B, 59/60, 592.
 Rao, M. V. (1993); IEEE Trans. Electron Dev. 40, 1053.
 Ali, Y.P., Narsale, A.M., Bhambani, U., Damle, A., Salvi, V., Arora, B., Shah, A. and Kanjilal, D. (1996); Nucl. Instr. and Meth. B, 117, 129.
 Brudnyi, M.A., Krivov, M.A. and Potapovet, A.I. (1980); Solid State Commun. 34, 117.
 Davis, E.A. and Mott, N.F. (1970); Philos. Mag. 22, 903.
 Bottger, H. and Bryksin, V.V. (1976); Phys.Status Solidi (b), 78, 9
 Kato, Y., Shimada,T., Shiraki, Y. and Komatsubara, (1974); J. Appl. Phys. 45, 1044.
 Short, K.T. and Pearton, S.J. (1988); J. Electrochem.Soc. 135, 2835.